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| APTDF200H120G Diode Full Bridge Power Module + AC1 AC2 VRRM = 1200V IC = 200A @ Tc = 60C Application * * * * Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers Features * * * * * * * Benefits AC2 + - - Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance - Symmetrical design - M5 power connectors High level of integration * * * * * * AC1 Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Absolute maximum ratings Symbol VR VRRM IF(A V) IF(RMS) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Duty cycle = 50% Current RMS Forward Current Duty cycle = 50% Non-Repetitive Forward Surge Current 8.3ms Max ratings 1200 TC = 25C TC = 60C TC = 45C TC = 45C 235 200 235 1500 Unit V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-4 APTDF200H120G - Rev 1 June, 2006 A APTDF200H120G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic VF IRM CT Diode Forward Voltage Maximum Reverse Leakage Current Junction Capacitance Test Conditions IF = 200A IF = 300A IF = 200A Tj = 125C Tj = 25C VR = 1200V Tj = 125C VR = 1200V Min Typ 2.4 2.7 1.8 Max 3.0 Unit V 150 600 220 A pF Dynamic Characteristics Symbol Characteristic trr trr Qrr IRRM trr Qrr IRRM Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions IF=1A,VR=30V di/dt = 200A/s Tj = 25C Tj = 25C IF = 200A VR = 800V di/dt = 400A/s Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C IF = 200A VR = 800V di/dt=2000A/s Tj = 125C Min Typ 45 385 480 2.1 10.5 12 38 210 19 140 Max Unit ns ns C A ns C A Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min 2500 -40 -40 -40 3 2 Typ Max 0.285 175 125 100 5 3.5 280 Unit C/W V C N.m g APTDF200H120G - Rev 1 June, 2006 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 www.microsemi.com 2-4 APTDF200H120G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 Thermal Impedance (C/W) 0.9 0.25 0.7 0.2 0.15 0.1 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage trr, Reverse Recovery Time (ns) 600 IF, Forward Current (A) 500 400 300 200 TJ =-55C T J=125C T J=175C 0.5 0.3 0.1 0.05 Single Pulse Trr vs. Current Rate of Charge 600 500 400 300 200 100 0 0 400 800 1200 1600 2000 2400 -diF/dt (A/s) IRRM vs. Current Rate of Charge 300 A 200 A 100 A T J=125C V R=800V 100 0 0.0 0.5 1.0 1.5 2.0 T J=25C 2.5 3.0 3.5 VF, Anode to Cathode Voltage (V) QRR, Reverse Recovery Charge (C) QRR vs. Current Rate Charge T J=125C V R=800V IRRM, Reverse Recovery Current (A) 24 150 125 100 75 50 25 0 400 800 1200 1600 2000 2400 -diF/dt (A/s) TJ=125C VR=800V 300 A 200 A 100 A 300 A 20 200 A 16 12 100 A 8 0 400 800 1200 1600 2000 2400 -diF/dt (A/s) Capacitance vs. Reverse Voltage 1500 1250 C, Capacitance (pF) IF(AV) (A) 1000 750 500 250 0 1 10 100 V R, Reverse Voltage (V) 1000 Max. Average Forward Current vs. Case Temp. 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 Case Temperature (C) Duty Cycle = 0.5 T J=175C www.microsemi.com 3-4 APTDF200H120G - Rev 1 June, 2006 APTDF200H120G SP6 Package outline (dimensions in mm) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 4-4 APTDF200H120G - Rev 1 June, 2006 |
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